Design of Lead-Free Perovskite Solar Cells Using Fasni3 Based Perovskite Layer With Fe/S-Doped Tio2 As Etl For Efficient Power Conversion


연구 분야: Databases



학회: 2024 International BIT Conference (BITCON)


초록

Tin-based perovskite materials are gaining popularity as potential alternatives for typical lead perovskite solar cells (PSCs). Despite this promise, reaching high efficiency with tin-based solar cells is still difficult. These devices often experience low power conversion efficiency and also have poor stability that affects their performance. To overcome the drawbacks, the proposed model designed a Fe/S-doped TiO2 as ETL and FASnI3 based perovskite layer based lead free PSC for enhancement in power conversion efficiency. The designed solar cell model consists of a glass substrate, following with a fluorine-doped tin oxide (FTO) layer acting as anode to collect positive charges (holes). Next, the HTL made of Poly (3,4-ethylenedioxythiophene) (PEDOT), which helps to move holes from the perovskite layer. This perovskite layer composed of formamidinium tin iodide (FASnI3) absorbs sunlight, generating excitons (electron-hole pairs) that separate into free charge carriers. The electrons then move to the ETL made of iron/sulfur-doped titanium dioxide (TiO2), and are directed to the aluminum cathode. The Electron Transport Layer (ETL) and Hole Transport Layer (HTL) work together to efficiently separate and collect charges, creating an electric current and minimizing losses, enhancing the solar cell's conversion of light into electricity. The efficiency of this process is boosted by the perovskite excellent light absorption and facilitating effective energy conversion. The proposed FASnI3-based lead-free PSC performance metrics are better than other existing materials in the perovskite layer, HTL, and ETL.


Author Profile
Rakesh Kumar

Department of ECE BIT Sindri Dhanbad Jharkhand India

India
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Somnath Maity

Department of ECE Government Women’s Polytechnic Jamshedpur Gamharia

정보 없음
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D. K. Singh

Jharkhand University of Technology (JUT) Ranchi Jharkhand India

India

📄 논문 정보

발행 연도 2024년
인용수 28
출판 국가 India
사이트 IEEE
좋아요 수 0

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