Performance Evaluation of the Sb2Se3-Based Thin Film Solar Cell Using SnS2 as the ETL and GaAs as the HTL

Performance Evaluation of the Sb2Se3-Based Thin Film Solar Cell Using SnS2 as the ETL and GaAs as the HTL

연구 분야: Databases

학회: 2025 International Conference on Electrical, Computer and Communication Engineering (ECCE)

This study offers a thorough analysis of the accomplishment traits of antimony selenide-based (Sb2Se3) perovskite solar cells using gallium arsenide GaAs identical to the transport layer of hole and tin sulfide (SnS2) as the electron transport layer using one-dimensional simulation tool (SCAPS-1D). The favorable characteristics of GaAs, such as their proper energy band offset and high hole mobility, boost the efficiency of hole extraction. SnS2 is also known to provide better electron transport and stability. Accompanying the aid of the SCAPS-1D simulation tool, a thorough examination of the device performances of the lead-free thin film solar cell with the suggested structure is conducted. The PV parameters of the device are analyzed through a diversity of the effect of absorber layer thickness, defect density, and work function. To see how they affect solar cell performance, the effects of temperature over and above series and shunt resistance are also examined. After the optimization, the proposed device structure enhanced its performance with PCE = 29.38%, Voc = 0.97 V, Jsc = 37.18 (mA/cm2), and FF = 87.05%. According to these results, Sb2Se3-based solar cells have the potential to be a practical and efficient renewable energy source.