Overcurrent Capability Evaluation of 600 V GaN GITs under Various Time Durations

Overcurrent Capability Evaluation of 600 V GaN GITs under Various Time Durations

연구 분야: Software Development

학회: 2021 IEEE Applied Power Electronics Conference and Exposition (APEC)

This work evaluates the overcurrent capability of 600V Gallium Nitride (GaN) Gate Injection Transistor (GIT) under different time durations and initial junction temperatures in a non-destructive approach. Setups and procedures are established to control drain current, time duration and junction temperature. The degradation of the device is examined after each overcurrent test. Gate-to-source voltage, drain-to-source voltage and drain current are measured for each test. Based on the test results, maximum withstand current, It-curve, I2t-curve, and maximum withstand energy are determined for 600V GaN GIT. The results can be applied to the design of GaN-based converters for transient and overload conditions, as well as dc solid-state circuit breakers.