Investigation of Temperature-Dependent Dynamic RON of GaN HEMT with Hybrid-Drain under Hard and Soft Switching

Investigation of Temperature-Dependent Dynamic RON of GaN HEMT with Hybrid-Drain under Hard and Soft Switching

연구 분야: Software Development

학회: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

GaN hybrid drain-embedded gate injection transistor (HD-GIT) can effectively suppress dynamic on-resistance (RON) degradation by hole injection from the p-GaN drain (PD) to release the trapped electrons. In this work, the dynamic RON performance of the GaN HD-GIT under hard and soft switching at elevated temperature has been comprehensively investigated. Under hard switching, the high temperature and high voltage, facilitating the turning on of the PD junction and/or charge transport in the buffer, can enhance hole injection from PD or positive buffer charging, leading to superior dynamic RON performance particularly for high-temperature and high-voltage operation.