6-inch GaN-on-Si Fabrication Technolgies for Monolithic Microwave Integrated Circuits (MMICs)

6-inch GaN-on-Si Fabrication Technolgies for Monolithic Microwave Integrated Circuits (MMICs)

연구 분야: Software Development

학회: 2024 IEEE International Conference on IC Design and Technology (ICICDT)

Fabrication technologies of 6-inch GaN-on-Si wafers for monolithic microwave integrated circuits (MMICs) have been developed. The high electron mobility transistor (HEMT) with aT-shape gate with a foot length L_{\mathrm{g}} of 0.5 \mu \mathrm{m} and width of 4\times 100\mu \mathrm{m} shows a maximum drain current (I_{\mathrm{d}\max}) of 600 mA/mm, a peak transconductance (\mathrm{g}_{\mathrm{m}\max}) of 200 mS/mm, and a cut-off frequency/a maximum oscillation frequency (f_{\mathrm{T}}/f\max) of 18/27 GHz. Large-signal load-pull measurement at a frequency of PW (100 \mu \mathrm{s} pulse width and 10 ms pulse period) 3.5 GHz and a drain voltage of 30 V showed a saturated output power density (P_{\text{sat}}) of 4.2 W/mm, and a peak power-added efficiency (PAE) of 78%, respectively. We also compared the devices with different W_{\mathrm{g}}. Compared to the device without field palte, the devices with source field plate (SFP) or gate field plate (GFP) show better DC and current collapse performance. In addition, passive devices like resistors, capacitors and spiral inductors were fabracited and their equivalent circuit models were established respectively to characterized the parasitic effects accurately. These results provide a viable alternative for low cost and large size-wafer GaN-on-Si fabrication of MMIC.