Analysis of Conduction Disturbance Voltage at Drive Ports of Sub-module under Short-Circuit Operation Condition in 500kV Flexible DC Converter Valve

Analysis of Conduction Disturbance Voltage at Drive Ports of Sub-module under Short-Circuit Operation Condition in 500kV Flexible DC Converter Valve

연구 분야: Infrastructure

학회: ICAIIS 2021: 2021 2nd International Conference on Artificial Intelligence and Information Systems

Some accidental processes in the operation of MMC flexible DC converter valve and the rapid switching of submodules will lead to the generation of some transient electromagnetic signals. This kind of transient signal is coupled to the IGBT drive circuit in the form of conduction disturbance through the parasitic parameters in the submodule loop, the gate voltage value of the IGBT drive port is further changed. This paper establishes the electromagnetic interference simulation model of a single submodule of 500 kV flexible DC converter valve, and analyzes the voltage change of IGBT driving port in the submodule under different matching strategies between converter valve and circuit breaker in short-circuit condition. The results show that under short-circuit conditions, positive and negative voltage spikes will be introduced at the IGBT drive port when the short-circuit fault is removed. When the device parameters in the sub-module are constant, the absolute value of the voltage spike is mainly determined by the driving circuit impedance and the common source inductance.